dmn3010lfg document number: ds36195 rev. 7 - 2 1 of 7 www.diodes.com june 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorporated n - channel enhancement mode mosfet powerd i ? product summary v (br)dss r ds(on) i d t c = +25 c 30v 8.5 m @ v gs = 10v 30a 1 0.5 m @ v gs = 4.5v 25a description this new generation mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. applications ? backlighting ? dc - dc converters ? power management functions features ? low r ds(on) C ensures on state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies just 33% of t he board area occupied by so - 8 enabling smaller end product ? 100% uis (avalanche) rated ? 100% rg tested ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 stan dards for high reliability mechanical data ? case: powerdi3333 - 8 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram below ? terminals: finish ? matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0. 0 72 grams ( a pproximate) ordering information (note 4) part number compliance case packaging dmn3010lfg - 7 standard powerdi3333 - 8 2 , 000/tape & reel dmn3010lfg - 13 standard powerdi3333 - 8 3 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information g10 = product m arking c ode yyww = date c ode m arking yy = last d igit of y ear (ex: 1 5 for 201 5 ) ww = week c ode (01 C powerdi3333 - 8 bottom view top view powerdi3333 - 8 d s g equivalent circuit s s s g d d d d pin 1 g10 y y w w
dmn3010lfg document number: ds36195 rev. 7 - 2 2 of 7 www.diodes.com june 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorporated maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 3 0 v gate - source voltage v gss 20 v continuous drain current (note 6 ) v gs = 10v steady state t a = + 25c t a = + 70 c i d 11 8.5 a t<10s t a = + 25c t a = + 70 c i d 14 11 a continuous drain current (note 6 ) v gs = 10v steady state t c = + 25c t c = + 100 c i d 30 20 a pulsed drain current ( 10s pulse, duty cycle = 1% ) i dm 90 a avalanche current (note 7 ) l = 0.1mh i a s 12.7 a avalanche energy (note 7 ) l = 0.1mh e a s 8.1 mj thermal characteristics characteristic symbol value units total power dissipation (note 5 ) p d 0.9 w thermal resistance, junction to ambient (note 5 ) steady state r ja 137 c/w t < 10s 90 c/w total power dissipation (note 6 ) p d 2.4 w thermal resistance, junction to ambient (note 6 ) steady state r ja 52 c/w t < 10s 35 c/w total power dissipation (note 6 ) t c = +25c p d 26 w thermal resistance, junction to case (note 6) r j c 4.8 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 30 gs = 0v, i d = 250a j = +25c i dss 1 a v ds = 30 v, v gs = 0v zero gate voltage drain current t j = +150c (note 9) gss 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 1.0 ds = v gs , i d = 250 a ds(on) 6.5 8.5 m gs = 10 v, i d = 18a 8 10.5 v gs = 4 .5v, i d = 16a diode forward voltage v sd 0.75 1.0 v v gs = 0v, i s = 1a on state drain current (note 9) i d(on) 10 ds Q gs = 4.5 v dynamic characteristics (note 9 ) input capacitance c iss 2 , 075 4 , 150 pf v ds = 15 v, v gs = 0v , f = 1.0mhz output capacitance c oss 190 380 reverse transfer capacitance c rss 138 276 gate r esistance r g 2.4 5 ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = 4.5 v ) q g 16.1 32 nc v ds = 15 v, i d = 18 a total gate charge ( v gs = 10 v ) q g 37 74 gate - source charge q gs 6.1 12 gate - drain charge q gd 5.9 12 turn - on delay time t d(on) 4.5 10 ns v d s = 15 v, v gs = 10 v, r l = 0.83 gen = 3 r 19.6 35 turn - off delay time t d(off) 31 50 turn - off fall time t f 10.7 21 reverse recovery time t rr 13.7 27 ns i f =1 5 a, di/dt=500a/ s reverse recovery charge q rr 18.3 37 n c notes: 5. device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal vias to bottom layer 1 - inch square copper plate. 7. uis in production with l = 1mh, t j = +25c. 8. short duration pulse test used to minimize self - heating effect. 9. guaranteed by design. not subject to production testing.
dmn3010lfg document number: ds36195 rev. 7 - 2 3 of 7 www.diodes.com june 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorporated v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 4.5v gs v = 3.5v gs v = 4.0v gs v = 5.0v gs v = 10.0v gs v = 2.8v gs v = 3.0v gs v = 2.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 1 2 3 4 5 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0 5 10 15 20 25 30 v = 4.5v gs v = 10v gs i , drain current (a) d figure 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 15 20 25 30 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs t , junction temperature ( c) figure 5 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v = v i = 10a gs d 10 v = v i = 5a gs d 4.5 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 -50 -25 0 25 50 75 100 125 150 v = v i = 10a gs d 10 v = v i = 5a gs d 5.0
dmn3010lfg document number: ds36195 rev. 7 - 2 4 of 7 www.diodes.com june 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorporated t , ambient temperature ( c) figure 7 gate threshold variation vs. ambient temperature a ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 v , drain-source voltage (v) ds figure 9 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 10000 0 5 10 15 20 25 30 c iss f = 1mhz c oss c rss q (nc) g , total gate charge figure 10 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 v = 15v i = a ds d 18 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 11 soa, safe operation area r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j (m ax ) t = 25c a v = 4.5v gs single pulse dut on 1 * mrp board
dmn3010lfg document number: ds36195 rev. 7 - 2 5 of 7 www.diodes.com june 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorporated package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi?3333 - 8 powerdi ? 3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? ? ? 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e ? ? ? ? 0.65 e1 0.79 0.89 0.84 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm t1, pulse duration time (sec) figure 12 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 0.001 0.01 0.1 1 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 r (t) = r(t) * r ? ? ja ja r = 137c/w ? ja duty cycle, d = t1/t2 d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse e1 1 8 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x)
dmn3010lfg document number: ds36195 rev. 7 - 2 6 of 7 www.diodes.com june 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorporated suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. powerdi?3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 x3 y3 x y c y1 y2 x1 x2 1 8
dmn3010lfg document number: ds36195 rev. 7 - 2 7 of 7 www.diodes.com june 2015 ? diodes incorporated dmn3010lfg new product powerdi is a registered trademark of diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signific ant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. cu stomers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requiremen ts concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , diodes incorporated www.diodes.com
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